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STB70NFS03L

Specifications Symbol Parameter Value Uni t STB7NB40 VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain- gate Voltage (RGS = 20 kW) 400 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 7 A ID Drai...

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SeekIC No. : 004507232 Detail

STB70NFS03L: Specifications Symbol Parameter Value Uni t STB7NB40 VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain- gate Voltage (RGS = 20 kW) 400 V VGS Gate...

STB70NFS03L Data Sheet

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Part Number:
STB70NFS03L
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Specifications

Symbol
Parameter
Value
Uni t
STB7NB40
VDS
 Drain-source Voltage (VGS = 0)
400
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
400
V
VGS
 Gate-source Voltage
± 30
V
ID
 Drain Current (continuous) at Tc = 25
7
A
ID
 Drain Current (continuous) at Tc = 100
4.4
A
IDM(•)
 Drain Current (pulsed)
28
A
Ptot
 Total Dissipation at Tc = 25
100
W
 Derating Factor
0.8
W/
dv/dt(1)
 Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
 Storage Temperature
-65 to 150
Tj
 Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
Symbol
Parameter
Value
Unit
VRRM
 Repetitive Peak Reverse Voltage  
30
V
IF(RMS)
 RMS Forward Current  
20
A
IF(AV)
 Average Forward Current
TL=125
d =0.5
3
A
IFSM
 Surge Non Repetit ive Forward Current
tp= 10 ms
Sinusoidal
75
A
dv/dt
 Critical Rate Of Rise Of Reverse Voltage  
10000
V/ms



Description

This product associates a Power MOSFET STB70NFS03L of the third generation of STMicroelect ronics unique "Single Feature Size" strip-based process and a low drop Schottky diode. The t ransistor shows the best t rade-off between on-resistance and gate charge. Used as low side in buck regulators, the product is the best solution in terms of conduction losses and space saving.




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