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STB75NE75

Features: ` TYPICAL RDS(on) = 0.01 W` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATION` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE` ADD SUFFIX T4 FORORDERING IN TAPE & REELApplication· SOLENOID AND RELAY DRIVERS· DC MOTOR CONTROL, AUDIO AMPLIFIERS·...

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SeekIC No. : 004507240 Detail

STB75NE75: Features: ` TYPICAL RDS(on) = 0.01 W` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATION` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE` ADD SUFFIX T4 FORORD...

STB75NE75 Data Sheet

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Part Number:
STB75NE75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.01 W
`  EXCEPTIONAL dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  APPLICATIONORIENTED CHARACTERIZATION
`  FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
`  ADD SUFFIX "T4" FORORDERING IN TAPE & REEL




Application

·  SOLENOID AND RELAY DRIVERS
·  DC MOTOR CONTROL, AUDIO AMPLIFIERS
·  DC-DC CONVERTERS
·  AUTOMOTIVE ENVIRONMENT




Pinout

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
75
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
75
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25
75
A
ID
 Drain Current (continuous) at Tc = 100
53
A
IDM(•)
 Drain Current (pulsed)
300
A
Ptot
 Total Dissipation at Tc = 25
160
W
 Derating Factor
1.06
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
7
V/ns
Ts tg
 Storage Temperature
-65 to 175
Tj
 Max. Operating Junction Temperature
175

(•) Pulse width limited by safe operating area ( 1) ISD 75 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX




Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
75
V
VDGR
 Drain- gate Voltage (RGS = 20 kW)
75
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25
75
A
ID
 Drain Current (continuous) at Tc = 100
53
A
IDM(•)
 Drain Current (pulsed)
300
A
Ptot
 Total Dissipation at Tc = 25
160
W
 Derating Factor
1.06
W/
dv/dt (1)
 Peak Diode Recovery voltage slope
7
V/ns
Ts tg
 Storage Temperature
-65 to 175
Tj
 Max. Operating Junction Temperature
175

(•) Pulse width limited by safe operating area ( 1) ISD 75 A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX




Description

This Power MOSFET STB75NE75 is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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