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STB7NC80Z

Features: `TYPICAL RDS(on) = 1.3` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES`100% AVALANCHE TESTED`VERY LOW GATE INPUT RESISTANCE`GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENTSpecifications Symb...

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STB7NC80Z: Features: `TYPICAL RDS(on) = 1.3` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES`100% AVALANCHE TESTED`VERY LOW GATE INPUT RESISTANCE`GATE CHARGE MINIMIZEDApplication· SINGLE-ENDE...

STB7NC80Z Data Sheet

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Part Number:
STB7NC80Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`TYPICAL RDS(on) = 1.3
` EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
`100% AVALANCHE TESTED
`VERY LOW GATE INPUT RESISTANCE
`GATE CHARGE MINIMIZED


Application

· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT


Specifications

Symbol
 Parameter
Value
Unit
  
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
VDS
 Drain-source Voltage (VGS = 0)
800
V
VDGR
 Drain-gate Voltage (RGS = 20 k)
800
V
VGS
 Gate- source Voltage
±25
V
ID
 Drain Current (continuos) at TC = 25°C
6.5
6.5(*)
A
ID
 Drain Current (continuos) at TC = 100°C
4
4(*)
A
IDM (`)
 Drain Current (pulsed)
26
26(*)
A
PTOT
 Total Dissipation at TC = 25°C
135
40
W
 Derating Factor
1.08
0.32
W/°C
IGS
 Gate-source Current
±50
mA
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=15K)
3
KV
dv/dt
 Peak Diode Recovery voltage slope
3
V/ns
VISO
 Insulation Winthstand Voltage (DC)
-
2000
V
Tstg
 Storage Temperature
65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C
(`) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed


Description

The third generation of MESH OVERLAY™ Power MOSFETs STB7NC80Z for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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