Position: Home  > All Categories> Integrated Circuits (ICs) > STB7NK80Z

STB7NK80Z

Features: · TYPICAL RDS(on) = 1.5 W· EXTREMELY HIGH dv/dt CAPABILITY· 100% AVALANCHE TESTED· GATE CHARGE MINIMIZED· VERY LOW INTRINSIC CAPACITANCES· VERY GOOD MANUFACTURING REPEATIBILITY Application· HIGH CURRENT, HIGH SPEED SWITCHING· SMPS FOR INDUSTRIAL APPLICATION.· LIGHTING (PREHEATING)Specifi...

product image

STB7NK80Z Picture
See larger image
SeekIC No. : 004507253 Detail

STB7NK80Z: Features: · TYPICAL RDS(on) = 1.5 W· EXTREMELY HIGH dv/dt CAPABILITY· 100% AVALANCHE TESTED· GATE CHARGE MINIMIZED· VERY LOW INTRINSIC CAPACITANCES· VERY GOOD MANUFACTURING REPEATIBILITY Application...

STB7NK80Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB7NK80Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·  TYPICAL RDS(on) = 1.5 W
·  EXTREMELY HIGH dv/dt CAPABILITY
·  100% AVALANCHE TESTED
·  GATE CHARGE MINIMIZED
·  VERY LOW INTRINSIC CAPACITANCES
·  VERY GOOD MANUFACTURING REPEATIBILITY




Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  SMPS FOR INDUSTRIAL APPLICATION.
·  LIGHTING (PREHEATING)




Specifications

Symbol
Parameter
Value
Unit
STP7NK80Z
STB7NK80Z
STB7NK80Z-1
STP7NK80ZFP
VDS
 Drain-source Voltage (VGS = 0)
800
V
VDGR
 Drain-gate Voltage (RGS = 20 kW)
800
V
VGS
 Gate- source Voltage
± 30
V
ID
 Drain Current (continuous) at TC = 25
5.2
5.2 (*)
A
ID
 Drain Current (continuous) at TC = 100°C
3.3
3.3 (*)
A
IDM (` )
 Drain Current (pulsed)
20.8
20.8 (*)
A
PTOT
 Total Dissipation at TC = 25
125
30
W
 Derating Factor
1
0.24
W/
VESD(G-S)
 Gate source ESD(HBM-C=100pF, R=1.5KW)
4000
V
dv/dt (1)
 Peak Diode Recovery voltage slope
4.5
V/ns
VISO
 Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
 Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150


() Pulse width limited by safe operating area
(1) ISD 5.2A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed



Description

The STB7NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Resistors
A101G
3006P-1-205LF
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Isolators
HCPL062N
HCPL316J
Kits
IT243
UVSC-110-4E1
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more