STB80NE06-10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 8.5 m Ohms


Features:

* TYPICAL R_DS(on) = 0.0085
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* APPLICATION ORIENTED
   CHARACTERIZATION
* FOR THROUGH-HOLE VERSION CONTACT
   SALES OFFICE


Application

* SOLENOID AND RELAY DRIVERS
* MOTOR CONTROL, AUDIO AMPLIFIERS
* DC-DC CONVERTERS
* AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Drain- gate Voltage (RGS = 20 k)	60	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	57	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	150	W
	Derating Factor	1	W/
dv/dt	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

Description

This STB80NE06-10 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size^TM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.