STB80NF03L-04-1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.004 Ohms


Features:

 TYPICAL RDS(on) = 0.0035
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-source Voltage	±20	V
ID(**)	Drain Current (continuous) at Tc = 25	80	A
ID(**)	Drain Current (continuous) at Tc = 100	80	A
IDM(`)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	300	W
	Derating Factor	2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	2	V/ns
EAS (2)	Single Pulse Avalanche Energy	2.3	J
Tstg	Storage Temperature	-60 to 175	°C
Tj	Max. Operating Junction Temperature	175	°C

(`) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I_SD80A, di/dt 240A/s, V_DD 24V, T_jT_JMAX
(2) Starting T_j = 25 , I_D = 40A, V_DD = 20V


Description

This STB80NF03L-04-1 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STB80NF03L-04-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	5500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 4.5V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB80NF03L 04 1 STB80NF03L041