STB80NF03L-04T4

MOSFET N-Ch 30 Volt 80 Amp

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SeekIC No. : 00159051 Detail

STB80NF03L-04T4: MOSFET N-Ch 30 Volt 80 Amp

floor Price/Ceiling Price

US $ .95~1.19 / Piece | Get Latest Price
Part Number:
STB80NF03L-04T4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~640
  • 640~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.19
  • $1.03
  • $1
  • $.95
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.004 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.004 Ohms


Pinout

  Connection Diagram


Description

The STB80NF03L-04T4 is designed as one kind of Power MOSFET device that can be used in wide range of applications such as (1)high current, high speed switching; (2)motor control, audio amplifiers; (3)DC-DC & DC-AC converters; (4)automotive environment (injection, ABS, AIR-BAG, lampdrivers, etc.). The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features of the STB80NF03L-04T4 are:(1)typical RDS(on) = 0.0035W; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)low threshold drive.

The absolute maximum ratings of the STB80NF03L-04T4 can be summarized as:(1)Drain-source Voltage (VGS = 0): 30 V;(2)Drain-gate Voltage (RGS = 20 k): 30 V;(3)Gate- source Voltage: ±20 V;(4)Drain Current (continuous) at TC = 25°C: 80 A;(5)Drain Current (continuous) at TC = 100°C: 80 A;(6)Drain Current (pulsed): 320 A;(7)Total Dissipation at TC = 25°C: 300 W;(8)Peak Diode Recovery voltage slope: 2 V/ns;(9)Single Pulse Avalanche Energy: 2.3 J;(10)Storage Temperature: -60 to 175 °C. If you want to know more information such as the electrical characteristics about the STB80NF03L-04T4, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationSTB80NF03L-04T4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 5500pF @ 25V
Power - Max300W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs110nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB80NF03L 04T4
STB80NF03L04T4
497 7952 6 ND
49779526ND
497-7952-6



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