ApplicationHIGH-EFFICIENCY DC-AC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage(RGS = 20 k) 100 V VGS Gate-source Voltage ±20 V ID Drain Current (con...
STB80NF10: ApplicationHIGH-EFFICIENCY DC-AC CONVERTERSUPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate V...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...
| Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage(RGS = 20 k) |
100 |
V |
|
VGS |
Gate-source Voltage |
±20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
80 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
80 (*) |
A |
|
IDM(•) |
Drain Current (pulsed) |
320 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
300 |
W |
| Derating Factor |
2 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
|
EAS (2) |
Single Pulse Avalanche Energy |
200 |
mJ |
|
Tstg |
Storage Temperature |
-55 to 175 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
This STB80NF10 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.