STB80NF12

Application·HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STB_P_W80NF12 STP80NF12FP VDS Drain-source Voltage (VGS = 0) 120 V VDGR Drain- gate Voltage (RGS = 20 k) 120 V VGS Gate-source Voltage ±20 V ID(*) ...

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SeekIC No. : 004507258 Detail

STB80NF12: Application·HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit STB_P_W80NF12 STP80NF12FP VDS Drain-source Voltage (VGS = 0) 120 V ...

floor Price/Ceiling Price

Part Number:
STB80NF12
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL



Specifications

Symbol Parameter Value Unit
STB_P_W80NF12 STP80NF12FP
VDS

Drain-source Voltage (VGS = 0)

120 V
VDGR

Drain- gate Voltage (RGS = 20 k)

120 V
VGS

Gate-source Voltage

±20 V
ID(*)

Drain Current (continuous) at Tc = 25

80 80(#) A
ID

Drain Current (continuous) at Tc = 100

60 60(#) A
IDM(•)

Drain Current (pulsed)

320 320(#) A
Ptot

Total Dissipation at Tc = 25

300 45 W

Derating Factor

2.0 0.3 W/

 dv/dt(1)

Peak Diode Recovery voltage slope

10

 V/ns

 EAS (2)

Single Pulse Avalanche Energy

700

 mJ

VISO

Insulation Withstand Voltage (DC)

------

2500

V

Tstg

Storage Temperature

-55 to 175
Tj

Max. Operating Junction Temperature




Description

This STB80NF12 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency,high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




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