STB80NF55-06-1, US $ .96-1.07 , STMicroelectronics, STB80NF55-06-1 DataSheet download, circuit diagram from SeekIC.com

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STB80NF55-06-1: MOSFET N-Ch, 55V-0.005ohms 80A

STB80NF55-06-1 Data Sheet

US $ .96~1.07 / Piece | Get Latest Price

Part Number:: STB80NF55-06-1
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	80 A
Resistance Drain-Source RDS (on) :	0.0065 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	I2PAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.0065 Ohms

Parameters:

Technical/Catalog Information	STB80NF55-06-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	4400pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	189nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB80NF55 06 1 STB80NF55061

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STB80NF55-06-1

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