FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 155nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Power - Max: 300W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: STMicroelectronics
Series: STripFET™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds: 3850pF @ 25V
Application·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENTSpecifications
|
Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-source Voltage (VGS = 0) |
55 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 kW) |
55 |
V |
| VGS |
Gate- source Voltage |
± 20 |
v |
| ID |
Drain Current (continuous) at TC = 25°C |
80 |
A |
| ID |
Drain Current (continuous) at TC = 100°C |
57 |
A |
| IDM(·) |
Drain Current (pulsed) |
320 |
A |
| Ptot |
Total Dissipation at TC = 25°C |
300 |
W |
| |
Derating Factor |
2 |
W/°C |
| EAS (1) |
Single Pulse Avalanche Energy |
870 |
mJ |
| Tstg |
Storage Temperature |
-55 to + 75 |
°C |
| Tj |
Max. Operating Junction Temperature |
|
|
DescriptionThis STB80NF55-08-1 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parameters: | Technical/Catalog Information | STB80NF55-08-1 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 3850pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 155nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STB80NF55 08 1
STB80NF55081
497 3516 5 ND
49735165ND
497-3516-5
|
STB80NF55-08-1 Data Sheet
