STB80NF55L-06

Application HIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain- gate Voltage (RGS = 20 k) 55 V ...

product image

STB80NF55L-06 Picture
SeekIC No. : 004507261 Detail

STB80NF55L-06: Application HIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS ...

floor Price/Ceiling Price

Part Number:
STB80NF55L-06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k)
55
V
VGS
Gate-source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
80
A
ID
Drain Current (continuous) at Tc = 100
57
A
IDM(•)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25
210
W
 
Derating Factor
1.4
W/
EAS(1)
Single Pulse Avalanche Energy
1
J
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175



Description

This STB80NF55L-06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Discrete Semiconductor Products
Batteries, Chargers, Holders
Semiconductor Modules
Integrated Circuits (ICs)
View more