STB80NF75L

Features:

·TYPICAL RDS(on) = 0.008 W
·EXCEPTIONAL dv/dt CAPABILITY
·100% AVALANCHE TESTED
·LOW THRESHOLD DRIVE


Application

·HIGH CURRENT, HIGH SWITCHING SPEED
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC & DC-AC CONVERTERS
·SOLENOID AND RELAY DRIVERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	75	V
VDGR	Drain-gate Voltage (RGS = 20 k)	75	V
VGS	Gate- source Voltage	± 16	V
ID(`)	Drain Current (continuos) at TC = 25	80	A
ID	Drain Current (continuos) at TC = 100	80	A
IDM(``)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at TC = 25	300	W
	Derating Factor	2	W/
dv/dt (1)	Peak Diode Recovery voltage slope	12	V/ns
EAS (2)	Single Pulse Avalanche Energy	930	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Max. Operating Junction Temperature

Description

This STB80NF75L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.