STB80PF55

Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATIONApplicationMOTOR CONTROL DC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR ...

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SeekIC No. : 004507265 Detail

STB80PF55: Features: TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATIONApplicationMOTOR CONTROL DC-DC & DC-AC CONVERTERSSpecifications ...

floor Price/Ceiling Price

Part Number:
STB80PF55
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.016
EXCEPTIONAL dv/dt CAPABILITY
  100% AVALANCHE TESTED
APPLICATION ORIENTED CHARACTERIZATION



Application

MOTOR CONTROL
DC-DC & DC-AC CONVERTERS



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain- gate Voltage (RGS = 20 k)
55
V
VGS
Gate-source Voltage
±13
V
ID(*)
Drain Current (continuous) at Tc = 25
80
A
ID
Drain Current (continuous) at Tc = 100
57
A
IDM(`)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25
300
W
Derating Factor
2
W/
dv/dt (1) Peak Diode Recovery voltage slope
7
V/ns
EAS (2)
Single Pulse Avalanche Energy
1.4
J
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
(`) Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1) ISD 40A, di/dt300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 , ID = 80A, VDD = 40V



Description

This STB80PF55 Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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