STB8444 Selling Leads, Price trend, STB8444 DataSheet download, circuit diagram from SeekIC.com

Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-220 and TO-263 Package.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage VDSVGS 40±20 VV Continuous Drain Current a (Tc=25 )Pulsed b Sigle Pulse Avalanche Energy d Ma...

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SeekIC No. : 004507266 Detail

STB8444: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-220 and TO-263 Package.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage...

STB8444 Data Sheet

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Part Number:: STB8444
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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STB80N20M5 evaluate
US $2.71 - 4 / Piece

MOSFET N-Ch 200V 0.019 61A Mdmesh V
STB80NE03L-06 evaluate
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...
STB80NE03L-06-1 evaluate
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...

Product Details

Description

Features:

·Super high dense cell design for low R_DS(ON).
·Rugged and reliable.
·TO-220 and TO-263 Package.

Specifications

Parameter	Symbol	Limit	Units
Drain-Source Voltage Gate-Source Voltage	V_DS V_GS	40 ±20	V V
Continuous Drain Current ^a (T_c=25 ) Pulsed ^b Sigle Pulse Avalanche Energy ^d Maximum Power Dissipation (T_c=25 )	I_DI_DM E_AS P_D	80 264 306 62	A A mJ W
Operating Junction and Storage Temperature Range	T_J,T_stg	-55 ~ +150

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STB8444

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