STB85NF3LL

Features: ` TYPICAL RDS(on) = 0.0075W (@4.5V)` OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications ...

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SeekIC No. : 004507267 Detail

STB85NF3LL: Features: ` TYPICAL RDS(on) = 0.0075W (@4.5V)` OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· ...

floor Price/Ceiling Price

Part Number:
STB85NF3LL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.0075W (@4.5V)
` OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL



Application

· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 kW) 30 V
VGS Gate- source Voltage ± 16 V
VGSM Gate-source Voltage Pulsed
(tp£50ms; duty cycle 25%; Tj £ 150°C)
± 20 V
ID Drain Current (continuos) at TC = 25°C 85 A
ID Drain Current (continuos) at TC = 100°C 60 A
IDM (l) Drain Current (pulsed) 340 A
PTOT Total Dissipation at TC = 25°C 110 W
  Derating Factor 0.73 W/°C
Tstg Storage Temperature 65 to 175 °C
Tj Max. Operating Junction Temperature 175 °C



Description

This application specific Power MOSFET is the third genaration of STB85NF3LL STMicroelectronics unique " Single Feature Size" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.




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