Features: ` TYPICAL RDS(on) = 0.0075W (@4.5V)` OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications ...
STB85NF3LL: Features: ` TYPICAL RDS(on) = 0.0075W (@4.5V)` OPTIMAL RDS(on) x Qg TRADE-OFF @4.5V` CONDUCTION LOSSES REDUCED` SWITCHING LOSSES REDUCED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· ...
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ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...
ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFI...
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 30 | V |
| VDGR | Drain-gate Voltage (RGS = 20 kW) | 30 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| VGSM | Gate-source Voltage Pulsed (tp£50ms; duty cycle 25%; Tj £ 150°C) |
± 20 | V |
| ID | Drain Current (continuos) at TC = 25°C | 85 | A |
| ID | Drain Current (continuos) at TC = 100°C | 60 | A |
| IDM (l) | Drain Current (pulsed) | 340 | A |
| PTOT | Total Dissipation at TC = 25°C | 110 | W |
| Derating Factor | 0.73 | W/°C | |
| Tstg | Storage Temperature | 65 to 175 | °C |
| Tj | Max. Operating Junction Temperature | 175 | °C |
This application specific Power MOSFET is the third genaration of STB85NF3LL STMicroelectronics unique " Single Feature Size" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.