STB9NB60

Features:

 TYPICAL RDS(on) = 0.7 Ω
 EXTREMELYHIGH dv/dt CAPABILITY
 100%AVALANCHE TESTED
 VERY LOWINTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	600	V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	600	V
VGS	Gate- source Voltage	± 30	V
ID	Drain Current (continuous)at TC =25	9	A
ID	Drain Current (continuous)at TC =100	5.7	A
IDM ()	Drain Current (pulsed)	36	A
PTOT	Total Dissipation at TC = 25	125	W
	Derating Factor	1	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V /ns
Tstg	Storage Temperature	-65 to 150
Tj	MAX.Operating Junction Temperature	150

Description

Using the latest high voltage MESH OVERLAY^TMprocess, STB9NB60 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.