STB9NK50Z

Features:

TYPICAL RDS(on) = 0.72 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value		Unit
		STP9NK50Z STB9NK50Z	STP9NK50ZFP
VDS	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	500		V
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuous)at TC =25	7.2	7.2(*)	A
ID	Drain Current (continuous)at TC =100	4.5	4.5 (*)	A
IDM ()	Drain Current (pulsed)	28.8	28.8(*)	A
PTOT	Total Dissipation at TC = 25	110	30	W
	Derating Factor	0.88	0.24	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	3500		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V /ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150 55 to 150

Description

The STB9NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.