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STB9NK90Z

MOSFET N Ch 900V 1.1 8A Zener SuperMESH

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SeekIC No. : 00162563 Detail

STB9NK90Z: MOSFET N Ch 900V 1.1 8A Zener SuperMESH

STB9NK90Z Data Sheet

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Part Number:
STB9NK90Z
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 1.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 1.3 Ohms


Features:

· EXTREMELY HIGH dv/dt CAPABILITY
· 100% AVALANCHE TESTED
· GATE CHARGE MINIMIZED


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES
· DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE


Specifications

Rating
Symbol
Value
Unit
TO-220/D²PAK/
TO-247
TO-220FP
Drain-Source Voltage (VGS = 0)
VDS
900
V
DraintoGate Voltage (RGS = 20 K)
VDGR
900
V
Gate-Source Voltage
VGS
±30
V
Drain Current - Continuous @ TC = 25°C
Drain Current - Continuous @ TC = 100°C
Drain Current (pulsed)
ID
ID
IDM
8
5
32
8 (Note 1)
5 (Note 1)
32 (Note 1)
A
A
A
Total Dissipation at TC = 25°C
PTOT
160
40
W
 
Derating Factor
1.28
0.32
W/°C
G-S ESD (HBM C=100pF, R=1.5k)
Vesd(G-S)
4
KV
Peak Diode Recovery voltage slope
dv/dt Note 3
4.5
V/ns
Insulation Withstand Volatge (DC)
VISO
-
2500
V
Operating Junction Temperature
Storage Temperature
Tj
Tstg
-55 to 150
°C



Description

The STB9NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.




Parameters:

Technical/Catalog InformationSTB9NK90Z
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.3 Ohm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds 2115pF @ 25V
Power - Max160W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB9NK90Z
STB9NK90Z
497 7955 6 ND
49779556ND
497-7955-6



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