STBV32 Selling Leads, Price trend, STBV32 DataSheet download, circuit diagram from SeekIC.com

Features: · ST13003 SILICON IN TO-92 PACKAGE· MEDIUM VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTINGSpecifications Symbol Parameter Value Uni t ...

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SeekIC No. : 004507281 Detail

STBV32: Features: · ST13003 SILICON IN TO-92 PACKAGE· MEDIUM VOLTAGE CAPABILITY· LOW SPREAD OF DYNAMIC PARAMETERS· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION· VERY HIGH SWITCHING SPEEDApplication· ELEC...

STBV32 Data Sheet

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Part Number:: STBV32
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
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Upload time: 2024/5/12

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Recent History
What is this?

STBV32-AP evaluate
US $.04 - .05 / Piece

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US $.11 - .12 / Piece

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STBV32G-AP evaluate
US $.11 - .12 / Piece

MOSFET H/V FST SWCH PW TRNS NPN

Product Details

Description

Features:

· ST13003 SILICON IN TO-92 PACKAGE
· MEDIUM VOLTAGE CAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED

Application

· ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING

Specifications

Symbol	Parameter	Value	Uni t
V_CES	Collector-Emit ter Voltage (V_BE = 0)	700	V
V_CEO	Collector-Emit ter Voltage (I_B = 0)	400	V
V_EBO	Emitter-Base Voltage (I_C = 0)	9	V
I_C	Collector Current	1.5	A
I_CM	Collector Peak Current (t_p < 5 ms)	3	A
I_B	Base Current	0.75	A
I_BM	Base Peak Current (t_p < 5 ms)	1.5	A
P_tot	Total Dissipation at T_c = 25	1.1	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

Description

The device STBV32 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

STBV32 uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The STBV32 is designed for use in compact fluorescent lamp application.

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STBV32

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