Transistors Bipolar (BJT) Hybrid emitter switch bipolar ESBT
STC08DE150HV: Transistors Bipolar (BJT) Hybrid emitter switch bipolar ESBT
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| Maximum DC Collector Current : | 15 A | DC Collector/Base Gain hfe Min : | 7.5 | ||
| Maximum Operating Temperature : | + 125 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247-4LHV | Packaging : | Tube |
|
Symbol |
Parameter |
Value |
Unit |
|
VCS(SS) |
Collector-source voltage (VBS =VGS =0V) |
1500 |
V |
|
VBS(OS) |
Base-source voltage (IC =0, VGS =0V) |
300 |
V |
|
VSB(OS) |
Source-base voltage (IC =0, VGS =0V) |
9 |
V |
|
VGS |
Gate-source voltage |
± 20 |
V |
|
IC |
Collector current |
8 |
A |
|
ICM |
Collector peak current (tP < 5ms) |
15 |
A |
|
IB |
Base current |
4 |
A |
|
IBM |
Base peak current (tP < 1ms) |
8 |
A |
|
Ptot |
Total dissipation at Tc 25°C |
156 |
W |
|
Tstg |
Storage temperature |
-40 to 150 |
°C |
|
TJ |
Max. operating junction temperature |
125 |
°C |
The STC08DE150HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology.
The STC08DE150HV is designed for use in aux flyback smps for any three phase application.