Power Driver ICs Swtch Bi Transistr ESBT 1200 V
STC08IE120HV: Power Driver ICs Swtch Bi Transistr ESBT 1200 V
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| Packaging : | Tube |
| Symbol | Parameter | Value | Unit |
| VCS(SS) | Collector-source voltage (VBS = VGS = 0 V) | 1200 | V |
| VBS(OS) | Base-source voltage (IC = 0, VGS = 0 V) | 30 | V |
| VSB(OS) | Source-base voltage (IC = 0, VGS = 0 V) | 17 | V |
| VGS | Gate-source voltage | ± 17 | V |
| IC | Collector current | 8 | A |
| ICM | Collector peak current (tP < 5ms) | 24 | A |
| IB | Base current | 6 | A |
| IBM | Base peak current (tP < 5ms) | 12 | A |
| Ptot | Total dissipation at Tc = 25°C | 208 | W |
| Tstg | Storage temperature | -40 to 150 | °C |
| TJ | Max. operating junction temperature | 150 | °C |
The STC08IE120HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
| Technical/Catalog Information | STC08IE120HV |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Applications | Gate Driver |
| Transistor Type | NPN - Emitter Switched Bipolar |
| Voltage - Rated | 1200V (1.2kV) |
| Current Rating | 8A |
| Package / Case | TO-247 |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STC08IE120HV STC08IE120HV 497 7464 5 ND 49774645ND 497-7464-5 |