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STC08IE150HV

TRANS ESBT 1500V 8A TO-247

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SeekIC No. : 003437658 Detail

STC08IE150HV: TRANS ESBT 1500V 8A TO-247

STC08IE150HV Data Sheet

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US $ .18~.47 / Piece | Get Latest Price
Part Number:
STC08IE150HV
Mfg:
Supply Ability:
5000

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Upload time: 2025/12/23

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Product Details

Quick Details

Series: ESBT® Manufacturer: STMicroelectronics
Transistor Type: NPN - Emitter Switched Bipolar Applications: Gate Driver
Voltage - Rated: 1500V (1.5kV) Propagation Delay Time : 5.2 ns
Current Rating: 8A Mounting Type: Through Hole
Package / Case: TO-247-4 Supplier Device Package: TO-247-4L HV    

Description

Manufacturer: STMicroelectronics
Transistor Type: NPN - Emitter Switched Bipolar
Applications: Gate Driver
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Supplier Device Package: TO-247-4L HV
Series: ESBT®
Voltage - Rated: 1500V (1.5kV)
Current Rating: 8A


Features:

High voltage / high current Cascode configuration
Low equivalent on resistance
Very fast-switch, up to 150 kHZ
Squared rbsoa, up to 1500 V
Very low CISS driven by RG = 47
Very low turn-off cross over time
In compliance with the 2002/93/EC European Directive


Application

Aux SMPS for three phase mains
Sepic PFC


Specifications

Symbol Parameter Value Unit
VCS(SS) Collector-source voltage (VBS = VGS = 0 V) 1500 V
VBS(OS) Base-source voltage (IC = 0, VGS = 0 V) 30 V
VSB(OS) Source-base voltage (IC = 0, VGS = 0 V) 17 V
VGS Gate-source voltage ± 17 V
IC Collector current 8 A
ICM Collector peak current (tP < 5ms) 24 A
IB Base current 6 A
IBM Base peak current (tP < 5ms) 12 A
Ptot Total dissipation at Tc = 25°C 208 W
Tstg Storage temperature -40 to 150 °C
TJ Max. operating junction temperature 150 °C



Description

The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.




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