STC6NF30V

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 0.02 Ohms
Configuration : Dual Common Drain Dual Source


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.020 @ 4.5 V
`  TYPICAL R_DS(on) = 0.025 @ 2.5 V
`  ULTRA LOW THRESHOLD GATE DRIVE (2.5 V)
`  STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
`  DOUBLE DICE IN COMMON DRAIN CONFIGURATION


Application

 ·  DC MOTOR DRIVE
 ·  DC-DC CONVERTERS
 ·  BATTERY SAFETY UNIT FOR NOMADIC EQUIPMENT
 ·  POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	20	V
VDGR	Drain-gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	±12	V
ID	Drain Current (continuous) at TC = 25	6	A
ID	Drain Current (continuous) at TC = 100	3.8	A
IDM(`)	Drain Current (pulsed)	24	A
Ptot	Total Dissipation at TC = 25	1.5	W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STC6NF30V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance.

Parameters:

Technical/Catalog Information	STC6NF30V
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	25 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds	800pF @ 25V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9nC @ 2.5V
Package / Case	8-TSSOP
FET Feature	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STC6NF30V STC6NF30V 497 3152 2 ND 49731522ND 497-3152-2