STD100N3LF3

MOSFET N Ch 30V 0.0045 Ohm 80A

product image

STD100N3LF3 Picture
SeekIC No. : 00156352 Detail

STD100N3LF3: MOSFET N Ch 30V 0.0045 Ohm 80A

floor Price/Ceiling Price

US $ .47~.55 / Piece | Get Latest Price
Part Number:
STD100N3LF3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1660
  • 1660~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.55
  • $.48
  • $.48
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms


Features:

Type VDSSS RDS(on) ID Pw
STD100N3LF3 30 V <0.0055 80 A(1) 110 W
STU100N3LF3 30 V <0.0055 80 A(1) 110 W

1. Current limited by package
100% avalanche tested
Logic level threshold

 




Application

Switching application


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
ID (1) Drain current (continuous) at TC = 25 80 A
ID Drain current (continuous) at TC = 100 70 A
IDM (2) Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 110 W
  Derating factor 0.73 W/
dv/dt (3) Peak diode recovery voltage slope 3.9 V/ns
Tstg

TJ
Storage temperature

Max. operating junction temperature
-55 to 175


1. Current limited by package.
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 360 A/s, VDS V(BR)DSS, TJ TJMAX




Description

This STD100N3LF3 Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.




Parameters:

Technical/Catalog InformationSTD100N3LF3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD100N3LF3
STD100N3LF3



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Discrete Semiconductor Products
LED Products
Sensors, Transducers
Computers, Office - Components, Accessories
Hardware, Fasteners, Accessories
Power Supplies - External/Internal (Off-Board)
View more