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STD100NH02LT4: MOSFET N-Ch 24 Volt 60 Amp

STD100NH02LT4 Data Sheet

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Part Number:: STD100NH02LT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	24 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	60 A
Resistance Drain-Source RDS (on) :	0.005 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : TO-252
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.005 Ohms
Drain-Source Breakdown Voltage : 24 V

Parameters:

Technical/Catalog Information	STD100NH02LT4
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	4.8 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	3940pF @ 15V
Power - Max	100W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD100NH02LT4 STD100NH02LT4 497 4100 6 ND 49741006ND 497-4100-6

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STD100NH02LT4

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