MOSFET N-Channel 650V Power MDmesh
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
| Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 9 A | ||
| Resistance Drain-Source RDS (on) : | 0.48 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Reel |
| Technical/Catalog Information | STD10NM65N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 50V |
| Power - Max | 90W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD10NM65N STD10NM65N 497 7957 2 ND 49779572ND 497-7957-2 |