STD10PF06

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.18 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.18
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` LOW GATE CHARGE
` APPLICATIONORIENTED CHARACTERIZATION
` ADD SUFFIX "T4" FORORDERING IN TAPE & REEL




Application

· MOTOR CONTROL
· DC-DC & DC-AC CONVERTERS




Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current (continuous) at TC = 25	10	A
ID	Drain Current (continuous) at TC = 100	7	A
IDM(`)	Drain Current (pulsed)	40	A
Ptot	Total Dissipation at TC = 25	40	W
	Derating Factor	0.27	W/
dv/dt	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(•) Pulse width limited by safe operating area
(1) I_SD 10 A, di/dt 300 A/s, V_DD V_(BR)DSS, T_j T_JMAX
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

Description

The STD10PF06 is a kind of power MOSFET which is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

The features of STD10PF06 can be summarized as (1)typical RDS(on) = 0.18; (2)exceptional dv/dt capability; (3)100% avalanche tested; (4)low gate charge; (5)application oriented characterization; (6)add suffix T4 for ordering in tape & reel.

The absolute maximum ratings of STD10PF06 are (1)VDS drain-source voltage (VGS = 0): 60 V; (2)VDGR drain- gate voltage (RGS = 20 k): 60 V; (3)VGS gate-source voltage: ± 20 V; (4)ID drain current (continuous) at Tc = 25°C: 10 A; (5)ID drain current (continuous) at Tc = 100°C: 7 A; (6)IDM(* Pulse width limited by safe operating area ( 1) I SD 10 A, di/dt 300 A/s, V DD V (BR)DSS , T j T JMAX)/drain current (pulsed): 40 A; (7)Ptot total dissipation at Tc = 25°C: 40 W; (8)derating factor: 0.27 W/°C; (9)dv/dt Peak diode recovery voltage slope: 6 V/ns; (10)Tstg storage temperature: -65 to 175°C; (11)Tj Max. operating junction temperature: 175°C(Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed).