STD11NM60N-1

MOSFET N Ch 600V 0.37 Ohm 10A

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SeekIC No. : 00162674 Detail

STD11NM60N-1: MOSFET N Ch 600V 0.37 Ohm 10A

floor Price/Ceiling Price

Part Number:
STD11NM60N-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

· 100% avalanche tested
· Low input capacitance and gate charge
· Low gate input resistance



Application

· Switching applications


Specifications

Symbol
Parameter
Value
Unit
TO-220/I²PAK
DPAK/IPAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VGS
Gate- source Voltage
±25
V
ID
Drain Current (continuos) at TC = 25
10
10(1)
A
ID
Drain Current (continuos) at TC = 100
6.3
6.3(1)
A
IDM(2)
Drain Current (pulsed)
40
40(1)
A
PTOT
Total Dissipation at TC = 25
90
25
W
Derating Factor
0.8
0.2
W/
dv/dt(3)
Peak Diode Recovery voltage slope
15
V/ns
Viso
Insulation Withstand Voltage (DC)
-
2500
V
TSTG

Operating Junction Temperature
Storage Temperature
-55 to150

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS



Description

This series of devices STD11NM60N-1 is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




Parameters:

Technical/Catalog InformationSTD11NM60N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs450 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD11NM60N 1
STD11NM60N1
497 5963 5 ND
49759635ND
497-5963-5



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