STD12N06

MOSFET TO-251 N-CH 60V 12A

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STD12N06 Picture
SeekIC No. : 00164571 Detail

STD12N06: MOSFET TO-251 N-CH 60V 12A

floor Price/Ceiling Price

Part Number:
STD12N06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 12 A Resistance Drain-Source RDS (on) : 0.1 Ohms
Mounting Style : SMD/SMT Package / Case : DPAK    

Description

Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Package / Case : DPAK
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

TYPICAL RDS(on) = 0.1
 AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
`  REPETITIVE AVALANCHE DATA AT 100oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
APPLICATION ORIENTED CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· REGULATORS
· DC-DC & DC-AC CONVERTERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol Parameter
Value
Unit
STD12N05 STD12N06
VDS Collector-Source Voltage (VGS = 0 V)
50
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

50

60
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
12
A
ID Drain Current (continuous) at TC = 100
8
A
IDM(•) Drain Current (pulsed)
48
A
Ptot Total Dissipation at TC = 25
45
W
Derating Factor
0.3
W/
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area


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