STD12NE06

Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : TO-252
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.08 Ohms
Drain-Source Breakdown Voltage : 60 V


Features:

 `  TYPICAL R<sub>DS(on)</sub> = 0.08  
 `  EXCEPTIONAL dv/dt CAPABILITY
 `  AVALANCHERUGGED TECHNOLOGY
 ` 100% AVALANCHE TESTED
 `  APPLICATIONORIENTED CHARACTERIZATION
 `  ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

 ·  DC MOTOR CONTROL (DISK DRIVES,etc.)
 ·  DC-DC & DC-AC CONVERTERS
 ·  SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	60	V
VDGR	Drain-gate Voltage (RGS = 20 k)	60	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current (continuous) at TC = 25	12	A
ID	Drain Current (continuous) at TC = 100	8	A
IDM (•)	Drain Current (pulsed)	48	A
Ptot	Total Dissipation at TC = 25	35	W
	Derating Factor	0.23	W/
dv/dt(1)	Peak Diode Recovery voltage slope	6	V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(`) Pulse width limited by safe operating area.
(1) I_SD 12A, di/dt  200A/s, V_DD V_(BR)DSS, T_j  T_JMAX


Description

This Power MOSFET STD12NE06 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.