Features: ` TYPICAL RDS(on) = 0.08 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) Application· HIGH CURRENT, HIGH SWITCHING SPEED· SO...
STD12NF06L: Features: ` TYPICAL RDS(on) = 0.08 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate-Source Voltage |
±16 |
V |
| ID | Drain Current (continuous) at TC = 25 |
12 |
A |
| ID | Drain Current (continuous) at TC = 100 |
8.5 |
A |
| IDM(`) | Drain Current (pulsed) |
48 |
A |
| Ptot | Total Dissipation at TC = 25 |
30 |
W |
| Derating Factor |
0.2 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
15 |
V/ns |
| EAS(2) | Single Pulse Avalanche Energy |
100 |
mJ |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
This Power MOSFET STD12NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.