STD12NF06L

Features: ` TYPICAL RDS(on) = 0.08 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) Application· HIGH CURRENT, HIGH SWITCHING SPEED· SO...

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STD12NF06L Picture
SeekIC No. : 004507373 Detail

STD12NF06L: Features: ` TYPICAL RDS(on) = 0.08 ` EXCEPTIONAL dv/dt CAPABILITY` LOW GATE CHARGE` LOW THRESHOLD DRIVE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252...

floor Price/Ceiling Price

Part Number:
STD12NF06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.08  
 ` 
EXCEPTIONAL dv/dt CAPABILITY
 `  LOW GATE CHARGE
 `  LOW THRESHOLD DRIVE
 `  THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
 `  SURFACE-MOUNTING DPAK (TO-252)
      POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

 ·  HIGH CURRENT, HIGH SWITCHING SPEED
 ·  SOLENOID AND RELAY DRIVERS
 ·  MOTOR CONTROL, AUDIO AMPLIFIERS
 ·  DC-DC & DC-AC CONVERTERS
 ·  AUTOMOTIVE ENVIRONMENT



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60

V
VGS Gate-Source Voltage
±16
V
ID Drain Current (continuous) at TC = 25
12
A
ID Drain Current (continuous) at TC = 100
8.5
A
IDM(`) Drain Current (pulsed)
48
A
Ptot Total Dissipation at TC = 25
30
W
  Derating Factor
0.2
W/
dv/dt(1) Peak Diode Recovery voltage slope
15
V/ns
EAS(2) Single Pulse Avalanche Energy
100
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) ISD 12A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID =6 A, VDD = 30V


Description

This Power MOSFET STD12NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment  steps therefore a remarkable manufacturing reproducibility.




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