STD150NH02L-1

MOSFET N-Ch, 24V-0.003ohms 150A

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SeekIC No. : 00161955 Detail

STD150NH02L-1: MOSFET N-Ch, 24V-0.003ohms 150A

floor Price/Ceiling Price

Part Number:
STD150NH02L-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 150 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : IPAK
Drain-Source Breakdown Voltage : 24 V
Continuous Drain Current : 150 A
Resistance Drain-Source RDS (on) : 0.0035 Ohms


Features:

` TYPICAL RDS(on) = 0.003 @ 10V
` TYPICAL RDS(on) = 0.005 @ 5V
` RDS(ON) * Qg INDUSTRY's BENCHMARK
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` LOW THRESHOLD DEVICE
` SURFACE MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

· SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
Vspik(1) Drain-source Voltage Rating            30      V
VDS
Drain-source Voltage (VGS = 0)
24
V
VDGR
Drain-gate Voltage (RGS = 20 k)
24
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25
150
A
ID
Drain Current (continuos) at TC = 100
95
A
IDM (2)
Drain Current (pulsed)
600
A
Ptot
Total Dissipation at TC = 25
125
W
Derating Factor
0.83
W/
EAS (3)
Single Pulse Avalanche Energy
900
mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature




Description

The STD150NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that coupled to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.




Parameters:

Technical/Catalog InformationSTD150NH02L-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C150A
Rds On (Max) @ Id, Vgs3.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4450pF @ 15V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs93nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD150NH02L 1
STD150NH02L1



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