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STD16NE06

Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED ` APPLICATIONORIENTED CHARACTERIZATION` THROUG-HOLE IPAK (TO-251) POWER PACKAGEIN TUBE (SUFFIX -1 ) ` SURFACE-MOUNTING DPAK (TO-252) POWERPACKAGE IN TAPE & REEL (SUFFIX T4 )Application· SOLENOID AND RELA...

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SeekIC No. : 004507389 Detail

STD16NE06: Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED ` APPLICATIONORIENTED CHARACTERIZATION` THROUG-HOLE IPAK (TO-251) POWER PACKAGEIN TUBE (SUFFIX -1 ) ` SURFAC...

STD16NE06 Data Sheet

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Part Number:
STD16NE06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.07
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION
` THROUG-HOLE IPAK (TO-251) POWER PACKAGEIN TUBE (SUFFIX "-1")
` SURFACE-MOUNTING DPAK (TO-252) POWERPACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

·  SOLENOID AND RELAY DRIVERS
·  MOTOR CONTROL, AUDIO AMPLIFIERS
·  DC-DC CONVERTERS
· AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
16
A
ID Drain Current (continuous) at TC = 100
11
A
IDM (•) Drain Current (pulsed)
64
A
Ptot Total Dissipation at TC = 25
40
W
  Derating Factor
0.26
W/
dv/dt Peak Diode Recovery voltage slope
7
V/ns
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(`) Pulse width limited by safe operating area.
(1) ISD 16A, di/dt  300A/s, VDDV(BR)DSS, Tj TJMAX


Description

This STD16NE06 Power MOSFET is the latest development of STMicroelectronics unique "STripFET™" strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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