STD16NE06L-1 Selling Leads, Price trend, STD16NE06L-1 DataSheet download, circuit diagram from SeekIC.com

Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY`100% AVALANCHE TESTED` LOW GATE CHARGE` APPLICATION ORIENTED CHARACTERIZATION Application· HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERSSpecifications ...

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SeekIC No. : 004507391 Detail

STD16NE06L-1: Features: ` TYPICAL RDS(on) = 0.07 ` EXCEPTIONAL dv/dt CAPABILITY`100% AVALANCHE TESTED` LOW GATE CHARGE` APPLICATION ORIENTED CHARACTERIZATION Application· HIGH CURRENT, HIGH SPEED SWITCHING· SOLEN...

STD16NE06L-1 Data Sheet

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Part Number:: STD16NE06L-1
Supply Ability:: 5000

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Upload time: 2025/12/23

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Product Details

Description

Features:

` TYPICAL R_DS(on) = 0.07
` EXCEPTIONAL dv/dt CAPABILITY
`100% AVALANCHE TESTED
` LOW GATE CHARGE
` APPLICATION ORIENTED CHARACTERIZATION

Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS

Specifications

Symbol	Parameter	Value	Unit
V_DS	Collector-Source Voltage (V_GS = 0 V)	60	V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	60	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current (continuous) at T_C = 25	16	A
I_D	Drain Current (continuous) at T_C = 100	11	A
I_DM (•)	Drain Current (pulsed)	64	A
P_tot	Total Dissipation at T_C= 25	40	W
	Derating Factor	0.3	W/
dv/dt	Peak Diode Recovery voltage slope	7	V/ns
T_stg	Storage Temperature	-65 to 175
T_j	Max. Operating Junction Temperature	175

(`) Pulse width limited by safe operating area.
(1) I_SD 16A, di/dt 300A/s, V_DD V_(BR)DSS, T_j T_JMAX

Description

This Power Mosfet STD16NE06L-1 is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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STD16NE06L-1

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