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STD16NE10

MOSFET RO 511-STD15NF10 TO-252 N-CH 100V 16A

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SeekIC No. : 00165893 Detail

STD16NE10: MOSFET RO 511-STD15NF10 TO-252 N-CH 100V 16A

STD16NE10 Data Sheet

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Part Number:
STD16NE10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Application

 DC MOTOR CONTROL (DISK DRIVERS,etc.)
 DC-DC & DC-ACCONVERTERS
 SYNCHRONOUS RECTIFICATION


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Drain-source Voltage (VGS = 0)
100
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

100

V

VGE
 Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C (Steady State)

16

A

ID
Drain Current (continuous) at TC = 100°C
11

A
IDM ()
Drain Current (pulsed)
64
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
50
W
 Derating Factor
0.33
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This Power MOSFET STD16NE10 is the latest development of SGS-THOMSON unique "Single Feature Size]" strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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