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STD16NE10L

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VCES Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kW) 100 V ...

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SeekIC No. : 004507392 Detail

STD16NE10L: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit VCES Drain-s...

STD16NE10L Data Sheet

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Part Number:
STD16NE10L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Drain-source Voltage (VGS = 0)
100
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

100

V

VGE
 Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C (Steady State)

16

A

ID
Drain Current (continuous) at TC = 100°C
11

A
IDM ()
Drain Current (pulsed)
64
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
55
W
 Derating Factor
0.36
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This Power MOSFET STD16NE10L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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