STD16NF06L-1

PinoutDescriptionThe STD16NF06L-1 is designed as one kind of N-channel 60V - 0.060 - 24A DPAK low gate charge STripFET power MOSFET device that is suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any appl...

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SeekIC No. : 004507394 Detail

STD16NF06L-1: PinoutDescriptionThe STD16NF06L-1 is designed as one kind of N-channel 60V - 0.060 - 24A DPAK low gate charge STripFET power MOSFET device that is suitable as primary switch in advanced high-efficie...

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Part Number:
STD16NF06L-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Description

The STD16NF06L-1 is designed as one kind of N-channel 60V - 0.060 - 24A DPAK low gate charge STripFET power MOSFET device that is suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Features of the STD16NF06L-1 are:(1)typical rds(on) = 0.060; (2)LOGIC LEVEL DEVICE; (3)THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1"); (4)SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4"). And this device can be used in switching applications.

The absolute maximum ratings of the STD16NF06L-1 can be summarized as:(1)Drain-source Voltage (VGS = 0): 60 V;(2)Drain-gate Voltage: 60 V;(3)Gate- source Voltage: +/-18 V;(4)Drain Current (continuos) at TC = 25°C: 24 A;(5)Drain Current (continuos) at TC = 100°C: 17 A;(6)Drain Current (pulsed): 96 A;(7)Total Dissipation at TC = 25°C: 40 W;(8)Peak Diode Recovery voltage slope: 11.5 V/ns;(9)Single Pulse Avalanche Energy: 200 mJ. If you want to know more information about the STD16NF06L-1, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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