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STD16NF06L

Features: ` TYPICAL RDS(on) = 0.060 ` LOGIC LEVEL DEVICE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· SWITCHING APPLICATIONSSpecifications Symbol Parameter Value Unit VDS C...

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SeekIC No. : 004507393 Detail

STD16NF06L: Features: ` TYPICAL RDS(on) = 0.060 ` LOGIC LEVEL DEVICE` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ...

STD16NF06L Data Sheet

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Part Number:
STD16NF06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.060
` LOGIC LEVEL DEVICE
` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
` SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

· SWITCHING APPLICATIONS


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±18
V
ID Drain Current (continuous) at TC = 25
24
A
ID Drain Current (continuous) at TC = 100
17
A
IDM(`) Drain Current (pulsed)
96
A
Ptot Total Dissipation at TC = 25
40
W
  Derating Factor
0.27
W/
dv/dt(1) Peak Diode Recovery voltage slope
11.5
V/ns
EAS(2) Single Pulse Avalanche Energy
200
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(1) ISD 16A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID =20 A, VDD = 48V


Description

This Power MOSFET STD16NF06L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and  less critical alignment steps therefore a remarkable manufacturing reproducibility.




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