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STD17NE03L

Features: TYPICAL RDS(on) = 0.034 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationSOLENOID AND RELAY DRIVERSMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC CONVERTERSAUTOMOTIVE ENVIRONMENTSpecifications Symb...

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STD17NE03L: Features: TYPICAL RDS(on) = 0.034 WEXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationSOLENOID AND RELAY DR...

STD17NE03L Data Sheet

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Part Number:
STD17NE03L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.034 W
 EXCEPTIONAL dv/dt CAPABILITY
 100% AVALANCHE TESTED
 APPLICATIONORIENTED CHARACTERIZATION
 ADD SUFFIX "T4" FORORDERING IN TAPE & REEL


Application

 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC CONVERTERS
 AUTOMOTIVE ENVIRONMENT


Specifications

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

30

V

VGE
 Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C

17

A

ID
Drain Current (continuous) at TC = 100°C
12

A
IDM ()
Drain Current (pulsed)
68
A
PTOT
Total Dissipation at TC = 25°C
35
W
 Derating Factor
0.23
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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