STD17NF03L-1

MOSFET N-Ch, 30V-0.038ohms 17A

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SeekIC No. : 00156147 Detail

STD17NF03L-1: MOSFET N-Ch, 30V-0.038ohms 17A

floor Price/Ceiling Price

US $ .23~.23 / Piece | Get Latest Price
Part Number:
STD17NF03L-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2200
  • 2200~5000
  • Unit Price
  • $.23
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 17 A
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

` TYPICAL RDS(on) = 0.038
EXCEPTIONAL dv/dt CAPABILITY
` LOW GATE CHARGE AT 100°C
` APPLICATION ORIENTED CHARACTERIZATION
` 100% AVALANCHE TESTED


Application

  · DC-DC & DC-AC CONVERTERS
  · MOTOR CONTROL, AUDIO AMPLIFIERS
  · HIGH CURRENT, HIGH SPEED SWITCHING
  · SOLENOID AND RELAY DRIVERS
  · AUTOMOTIVE ENVIRONMENT



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
30
V
VDGR Drain-gate Voltage (RGS = 20 k)

30

V
VGS Gate-Source Voltage
±16
V
ID Drain Current (continuous) at TC = 25
17
A
ID Drain Current (continuous) at TC = 100
12
A
IDM(`) Drain Current (pulsed)
68
A
Ptot Total Dissipation at TC = 25
20
W
  Derating Factor
0.2
W/
dv/dt(1) Peak Diode Recovery voltage slope
7
V/ns
EAS(2) Single Pulse Avalanche Energy
200
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
175
(1) ISD 17A, di/dt  300A/s, VDD    V(BR)DSS, T  TJMAX
(2) Starting Tj = 25, ID = 8.5A, VDD =15V
(`) Pulse width limited by safe operating area


Description

This STD17NF03L-1 MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTD17NF03L-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs50 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 320pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs6.5nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD17NF03L 1
STD17NF03L1



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