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STD17NF03L

Features: ` TYPICAL RDS(on) = 0.038` EXCEPTIONAL dv/dt CAPABILITY` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL` ADD SUFFIX -1 FOR ORDERING IN IPAK VERSIONApplication· DC-DC & DC-AC CONVERTERS· MOTOR CONTROL, AUDIO AMPLIFIERS· SOLENOID AND RELAY DRIV...

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STD17NF03L: Features: ` TYPICAL RDS(on) = 0.038` EXCEPTIONAL dv/dt CAPABILITY` APPLICATION ORIENTED CHARACTERIZATION` ADD SUFFIX T4 FOR ORDERING IN TAPE & REEL` ADD SUFFIX -1 FOR ORDERING IN IPAK VERSIO...

STD17NF03L Data Sheet

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Part Number:
STD17NF03L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.038
 `  EXCEPTIONAL dv/dt CAPABILITY
 `  APPLICATION ORIENTED CHARACTERIZATION
 `  ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
 `  ADD SUFFIX "-1" FOR ORDERING IN IPAK VERSION


Application

· DC-DC & DC-AC CONVERTERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· SOLENOID AND RELAY DRIVERS
· AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±16
V
ID Drain Current (continuous) at TC = 25
40
A
ID Drain Current (continuous) at TC = 100
28
A
IDM(`) Drain Current (pulsed)
160
A
Ptot Total Dissipation at TC = 25
100
W
  Derating Factor
0.67
W/
VESD(G-S) Gate-source ESD(HBM-C=100pF, R=15k)
±2.5
kV
dv/dt(1) Peak Diode Recovery voltage slope
9
V/ns
EAS(2) Single Pulse Avalanche Energy
450
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(1) ISD 17A, di/dt  300A/s, VDD    V(BR)DSS, Tj    TJMAX
(2) Starting Tj = 25, ID = 11A, VDD =15V


Description

This STD17NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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