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STD1NB50

Features: TYPICAL RDS(on) = 7.5 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR SMD DPAK VERSIONCONTACT SALES OFFICEApplicationSWITCH MODE POWER SUPPLIES (SMPS)DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWERSUPPLIES AND...

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STD1NB50: Features: TYPICAL RDS(on) = 7.5 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR SMD DPAK VERSIONCONTACT SALES OFFICEApplicationSWITCH MOD...

STD1NB50 Data Sheet

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Part Number:
STD1NB50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 TYPICAL RDS(on) = 7.5 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 FOR SMD DPAK VERSIONCONTACT SALES OFFICE


Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
500
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

500

V

VGE
 Gate-Emitter Voltage
± 36
V

ID

Drain Current (continuous) at TC = 25°C (Steady State)

1.4

A

ID
Drain Current (continuous) at TC = 100°C
0.91

A
IDM ()
Drain Current (pulsed)
5.6
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
45
W
 Derating Factor
0.36
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3.5
V/ns

Tstg

 Storage Temperature

- 65 to 150
°C

Tj

Max. Operating Junction Temperature

150

°C




Description

Using the latest high voltage MESH OVERLAY] process, STD1NB50 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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