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STD1NB80

Features: TYPICAL RDS(on) = 16 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDADD SUFFIX T4 FOR ORDERING IN TAPE&REELApplicationSWITCH MODE POWER SUPPLIES (SMPS)AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENTSpecifications ...

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SeekIC No. : 004507414 Detail

STD1NB80: Features: TYPICAL RDS(on) = 16 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDADD SUFFIX T4 FOR ORDERING IN TAPE&REELApplicationSWITCH...

STD1NB80 Data Sheet

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Part Number:
STD1NB80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 TYPICAL RDS(on) = 16 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 ADD SUFFIX "T4" FOR ORDERING IN TAPE&REEL


Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT


Specifications

Symbol
 Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
800
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

800

V

VGE
 Gate-Emitter Voltage
± 30
V

ID

Drain Current (continuous) at TC = 25°C

1

A

ID
Drain Current (continuous) at TC = 100°C
0.63

A
IDM ()
Drain Current (pulsed)
4
A
PTOT
Total Dissipation at TC = 25°C
50
W
 Derating Factor
0.4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns

Tstg

 Storage Temperature

- 65 to 150
°C

Tj

Max. Operating Junction Temperature

150

°C




Description

Using the latest high voltage MESH OVERLAYÔ process, STD1NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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