STD1NK60-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 8 Ohms
Continuous Drain Current : 1 A


Description

The features of STD1NK60-1: (1)typical RDS(on) = 8 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)new high voltage benchmark.

The following is about the maximum ratings of STD1NK60-1: (1)Drain-source Voltage (VGS = 0): 600 V ; (2)Drain- gate Voltage (RGS = 20 k): 600 V ; (3)Gate-Source Voltage: ±30 V ; (4)Drain Current (continuous) at Tc = 25 : 1.0 A  ; (5)Drain Current (continuous) at Tc = 100 : 0.63 A ; (6)Drain Current (pulsed): 4 A ; (7)Total Dissipation at Tc = 25 : 30 W ; (8)Derating Factor: 0.4 W/ ; (9)Storage Temperature: -55 to 150   ; (10)Operating Junction Temperature: -55 to 150 .

 

Parameters:

Technical/Catalog Information	STD1NK60-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	8.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	156pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD1NK60 1 STD1NK601