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STD1NK80Z

Features: `TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY`ESD IMPROVED CAPABILITY`100% AVALANCHE TESTED`NEW HIGH VOLTAGE BENCHMARK`GATE CHARGE MINIMIZEDApplication·AC ADAPTORS AND BATTERY CHARGERS·SWITH MODE POWER SUPPLIES (SMPS)Specifications Symbol Parameter Value Unit TO-9...

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SeekIC No. : 004507421 Detail

STD1NK80Z: Features: `TYPICAL RDS(on) = 13` EXTREMELY HIGH dv/dt CAPABILITY`ESD IMPROVED CAPABILITY`100% AVALANCHE TESTED`NEW HIGH VOLTAGE BENCHMARK`GATE CHARGE MINIMIZEDApplication·AC ADAPTORS AND BATTERY CHA...

STD1NK80Z Data Sheet

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Part Number:
STD1NK80Z
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

`TYPICAL RDS(on) = 13
` EXTREMELY HIGH dv/dt CAPABILITY
`ESD IMPROVED CAPABILITY
`100% AVALANCHE TESTED
`NEW HIGH VOLTAGE BENCHMARK
`GATE CHARGE MINIMIZED


Application

·AC ADAPTORS AND BATTERY CHARGERS
·SWITH MODE POWER SUPPLIES (SMPS)


Specifications

Symbol Parameter Value Unit
    TO-92 SOT-223 DPAK/IPAK  
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 0.3 0.25 1.0 A
ID Drain Current (continuous) at TC = 100°C 0.19 0.16 0.63 A
IDM (`) Drain Current (pulsed) 5 A
PTOT Total Dissipation at TC = 25°C 3 2 45 W
  Derating Factor 0.025 0.02 0.36 W /°C
VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5K) 1000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature		 -55 to 150 °C
(`) Pulse width limited by safe operating area
(1) ISD 1 A, di/dt 200 A/s, VDD 640


Description

The STD1NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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