Features: TYPICAL RDS(on) = 0.026 WAVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTEDREPETITIVE AVALANCHE DATA AT 100oCHIGH CURRENT CAPABILITY175oC OPERATING TEMPERATUREHIGH dV/dt RUGGEDNESSTHROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1 )SURFACE-MOUNTING DPAK (TO-252)POWER PACKAGE IN T...
STD20N06: Features: TYPICAL RDS(on) = 0.026 WAVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTEDREPETITIVE AVALANCHE DATA AT 100oCHIGH CURRENT CAPABILITY175oC OPERATING TEMPERATUREHIGH dV/dt RUGGEDNESSTHROUGH-HO...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
60 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
ID |
Drain Current (continuous) at TC = 25°C |
20 |
A |
ID |
Drain Current (continuous) at TC = 100°C |
14 |
A |
IDM () |
Drain Current (pulsed) |
60 |
A |
PTOT |
Total Dissipation at TC = 25°C |
80 |
W |
|
Derating Factor |
0.4 |
W/°C |
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This series of POWER MOSFETS STD20N06 represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability.