STD20NF06L-1

Features: Exceptional dv/dt capability 100% avalanche tested Application oriented characterizationApplication Switching applicationSpecifications Symbol Parameter Value Unit VDSVGSIDIDIDM(1)PTOTdv/dt (2)EAS (3)TjTstg Drain-source voltage (VGS = 0)Gate-source voltageDrain cur...

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SeekIC No. : 004507427 Detail

STD20NF06L-1: Features: Exceptional dv/dt capability 100% avalanche tested Application oriented characterizationApplication Switching applicationSpecifications Symbol Parameter Value Unit VD...

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Part Number:
STD20NF06L-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Description



Features:

Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization



Application

Switching application


Specifications

Symbol
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM(1)
PTOT

dv/dt (2)
EAS (3)
Tj
Tstg
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
60
± 18
24
17
96
60
0.4
10
225
-55 to 175
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
1. Pulse width limited by safe operating area
2. ISD < 24A, di/dt < 300A/ns, VDD = 80% V(BR)DSS
3. Starting Tj = 25°C, ID = IAR, VDD = 60V



Description

This STD20NF06L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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