Features: Exceptional dv/dt capability 100% avalanche tested Application oriented characterizationApplication Switching applicationSpecifications Symbol Parameter Value Unit VDSVGSIDIDIDM(1)PTOTdv/dt (2)EAS (3)TjTstg Drain-source voltage (VGS = 0)Gate-source voltageDrain cur...
STD20NF06L-1: Features: Exceptional dv/dt capability 100% avalanche tested Application oriented characterizationApplication Switching applicationSpecifications Symbol Parameter Value Unit VD...
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|
Symbol |
Parameter |
Value |
Unit |
| VDS VGS ID ID IDM(1) PTOT dv/dt (2) EAS (3) Tj Tstg |
Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature |
60 ± 18 24 17 96 60 0.4 10 225 -55 to 175 |
V V A A A W W/°C V/ns mJ °C |
This STD20NF06L-1 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.