STD20NF06L

Features: ` TYPICAL RDS(on) = 0.032 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· POWER TOOLS· AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter ...

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STD20NF06L Picture
SeekIC No. : 004507426 Detail

STD20NF06L: Features: ` TYPICAL RDS(on) = 0.032 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATION` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUF...

floor Price/Ceiling Price

Part Number:
STD20NF06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.032
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

· POWER TOOLS
· AUTOMOTIVE ENVIRONMENT



Specifications

Symbol
Parameter
Value
Unit
Vspik(1) Drain-source Voltage Rating            30       V
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
±18
V
ID
Drain Current (continuos) at TC = 25
24
A
ID
Drain Current (continuos) at TC = 100
17
A
IDM (`)
Drain Current (pulsed)
96
A
Ptot
Total Dissipation at TC = 25
60
W
Derating Factor
0.4
W/
dv/dt(1) Peak Diode Recovery voltage slope
10
V/ns
EAS (2)
Single Pulse Avalanche Energy
235
mJ
Tstg
Storage Temperature
-55 to 175
Tj
Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area.
(1) ISD 20A, di/dt200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25, ID = 15A, VDD = 30V


Description

This STD20NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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