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STD22NM20N

Features: ` WORLDWIDE LOWEST GATE CHARGE` TYPICAL RDS(on) = 0.088 ` HIGH dv/dt and AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE` LOW GATE RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density allowing system miniaturization and higher efficienciesSpecificatio...

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STD22NM20N: Features: ` WORLDWIDE LOWEST GATE CHARGE` TYPICAL RDS(on) = 0.088 ` HIGH dv/dt and AVALANCHE CAPABILITIES` LOW INPUT CAPACITANCE` LOW GATE RESISTANCEApplicationThe MDmesh™ family is very suita...

STD22NM20N Data Sheet

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Part Number:
STD22NM20N
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  WORLDWIDE LOWEST GATE CHARGE
`  TYPICAL RDS(on) = 0.088
`  HIGH dv/dt and AVALANCHE CAPABILITIES
`  LOW INPUT CAPACITANCE
`  LOW GATE RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density allowing system miniaturization and higher efficiencies




Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)
200
V
VGS Gate-Source Voltage
± 20
V
ID Drain Current (continuous) at TC = 25
Drain Current (continuous) at TC = 100
22
13.7
A
A
IDM(*) Drain Current (pulsed)
88
A
PTOT Total Dissipation at TC = 25
100
W
  Derating Factor
0.8
W/
dv/dt(2) Peak Diode Recovery voltage slope
14
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
150
-65 to 150

(*) ISD 22A, di/dt 400A/s, VDD = 80% V(BR)DSS


Description

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting effeciency.




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